- Electrical properties of Vertical InAs/InGaAs Heterostructure MOSFETs
O-P Kilpi, J. Svensson, E Lind, L-E Wernersson, J. Electron Dev. Soc. In press 2018
- High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications
C.B. Zota, C. Convertino, Y. Baumgartner, M. Sousa, D. Caimi, L. Czornomaz, IEEE Internat. Electron Dev Meeting 2018, 39.4 (2018)
- Balanced Drive Currents in 10-20 nm Diameter Nanowire All-III-V CMOS on Si
A. Jönsson, J. Svensson, L-E Wernersson, IEEE Internat. Electron Dev Meeting 2018, 39.3 (2018)
- InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
C. Convertino, C. Zota, S. Sant, F. Eltes, M. Sousa, D. Caimi, A. Schenk, L. Czornomaz, IEEE Internat. Electron Dev Meeting 2018, 39.2 (2018)
- Facet-selective group-III incorporation in InGaAs Template Assisted Selective Epitaxy
