Integration of III-V Nanowire Semiconductors for next
Generation High Performance CMOS SOC TECHNOLOGIES

Winter school

INSIGHT has organised a winter school in Leux Deus Alpes, France on February 8-9th 2018, open to postgraduate students and researchers interested in the physics and technology of III-V nanowire transistors. The objective of the winter school was to introduce postgraduates and researchers to the state of the art III-V nanowires for digital and RF CMOS applications. The topics covered were:

  • Advanced Si CMOS devices (Maud Vinet, CEA-LETI)
  • Novel materials and device integration (Veeresh Despande, IMEC)
  • The physics of ballistic transport in MOSFETs (Erik Lind, ULUND)
  • Impedance spectroscopy of defects in MOS structures (Paul Hurley, Tyndall)
  • RF Circuits in Si and SiGe: Power amplifiers, LNAs, VCOs and Mixers (Didier Belot, CEA-LETI)
  • III-V RF MMIC Circuits (Christian Friesecke, Fraunhofer IAF)


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