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INSIGHT contributes two papers to IEDM 2017

Published: 2017-12-31

INSIGHT maintains its presence at the important International Electron Device Meeting (IEDM), attended both by the semiconductor industry and the academic leaders in device research. Both Lund University and IBM have each an INSIGHT related contribution to this year’s conference:

The contribution of Lund University is titled "Sub-100-nm Gate-Length Scaling of Vertical InAs/InGaAs Nanowire MOSFETs on Si" by Kilpi et al, where a process to vary the the gate-length of vertical MOSFETs on the same chip is described, as well as demonstrating a device with gm = 2.4 mS/μm and a device with Ion = 407 μA/μm at Ioff = 100 nA/μm and VDD = 0.5 V, which both are record values for vertical MOSFETs. 

The contribution of IBM is titled "A Scaled Replacement Metal Gate InGaAs-on-Insulator n-FinFET on Si with Record Performance" by Hahn et al, and demonstrates a demonstrate  a  scaled  replacement-metal-gate InGaAs-on-Insulator  n-FinFET  on  Si  with LG = 13 nm  and record ION of 249 μA/μm at fixed IOFF = 100 nA/μm and VD = 0.5 V.



 


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