INSIGHT contributes to the VLSI Symposia 2017
INSIGHT contributes two papers to VLSI this year
Both Lund University and IBM + LETI have an INSIGHT related contribution to the prestigous VLSI Symposia, this year taking place in Kyoto, Japan. This is a testament to the high level of research the partners are doing in the project.
The contribution of Lund University is titled "Vertical Heterojunction InAs/InGaAs Nanowire MOSFETs on Si with Ion = 330 µA/µm at Ioff = 100 nA/µm and VD = 0.5 V" by Kilpi et al, where improved on-currents are demonstrated in vertical nanowire MOSFETs with a modified drain heterostructure.
The contribution of IBM and LETI is titled "First Demonstration of 3D SRAM Through 3D Monolithic Integration of InGaAs n-FinFETs on FDSOI Si CMOS with Inter-layer Contacts" by Deshpande et al, and demonstrates a hybrid 3D SRAM cells using InGaAs nFETs and SiGe pFETs co-integrated in a 3D stack.
Today INSIGHT releases a video about the project and its project goals. See the video below: