INSIGHT

Integration of III-V Nanowire Semiconductors for next
Generation High Performance CMOS SOC TECHNOLOGIES

News archive, 2017

INSIGHT contributes to the VLSI Symposia 2017

Published: 2017-06-13

INSIGHT contributes two papers to VLSI this year

Both Lund University and IBM + LETI have an INSIGHT related contribution to the prestigous VLSI Symposia, this year taking place in Kyoto, Japan. This is a testament to the high level of research the partners are doing in the project.

The contribution of Lund University is titled "Vertical Heterojunction InAs/InGaAs Nanowire MOSFETs on Si with Ion = 330 µA/µm at Ioff = 100 nA/µm and VD = 0.5 V" by Kilpi et al, where improved on-currents are demonstrated in vertical nanowire MOSFETs with a modified drain heterostructure. 

The contribution of IBM and LETI is titled "First Demonstration of 3D SRAM Through 3D Monolithic Integration of InGaAs n-FinFETs on FDSOI Si CMOS with Inter-layer Contacts" by Deshpande et al, and demonstrates a hybrid 3D SRAM cells using InGaAs nFETs and SiGe pFETs co-integrated in a 3D stack.



 


INSIGHT video

Published: 2017-02-16

Today INSIGHT releases a video about the project and its project goals. See the video below:

 



 


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